PART |
Description |
Maker |
AT45DB321C-CC AT45DB321C-RI AT45DB321C-CI AT45DB32 |
32 MEGABIT 2.7 VOLT DATAFLASH TRANSI, NPN, 160V, 600MA, 2W, SOT223, CZT5551 DIODE/SM,REC*1A*60V 32M X 1 FLASH 2.7V PROM, PDSO28
|
Atmel Corp. Atmel, Corp.
|
AA113 2-OA95 2-OA90 2-OA91R JAN1N3287X 1N3287R JAN |
65 V, GERMANIUM, SIGNAL DIODE 100 V, GERMANIUM, SIGNAL DIODE 30 V, GERMANIUM, SIGNAL DIODE 6 V, GERMANIUM, SIGNAL DIODE 20 V, GERMANIUM, SIGNAL DIODE
|
MICROSEMI CORP MICROSEMI CORP-LAWRENCE
|
BDX33B BDX34C BDX34B ON0204 BDX33C |
From old datasheet system 10 AMPERE COMPLEMENTARY Darlington Complementary Silicon Power Transistors
|
Motorola Inc ON Semiconductor Motorola, Inc
|
2N6488 2N6491 2N6487 2N6490 ON0097 |
15AMPERE COMPLEMENTARY COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system
|
ONSEMI[ON Semiconductor]
|
NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™ Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET) Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW |
Complementary NPN?PNP Power Bipolar Transistors ; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD Complementary NPN-PNP Power Bipolar Transistors Complementary Power Transistors
|
ON Semiconductor http://
|
1N3470 |
Germanium Diode
|
New Jersey Semi-Conductor Products, Inc.
|
OA1180 |
GERMANIUM DIODE
|
BK
|
1N2929 |
Germanium Diode
|
New Jersey Semi-Conductor Products, Inc.
|
OA47 1N100A 1N933 OA79 AA113 AAZ15 AAZ18 AAZ17 1N3 |
GERMANIUM DIODES
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
OA95/05 |
Diode Germanium
|
ETC
|
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